What is Rapid Thermal Processing (RTP)?
Rapid Thermal Processing (RTP) is a semiconductor manufacturing technique used to heat materials to high temperatures (typically above 1,000°C) for short periods using intense, controlled radiation. This method offers a precise and efficient alternative to conventional furnace annealing processes.
Key Features of RTP
- Fast Heating and Cooling: Achieves heating rates of several hundred degrees Celsius per second, minimizing diffusion and thermal stress.
- Localized Processing: Focuses thermal energy on the wafer surface.
- Precise Temperature Control: Infrared pyrometers and feedback systems ensure accuracy.
- Single-Wafer Processing: Allows greater control and uniformity.
Applications of RTP
- Annealing: Repairs damage from ion implantation and activates dopants.
- Oxidation: Forms thin oxide layers on semiconductor wafers.
- Silicide Formation: Creates silicide layers for integrated circuit contacts.
- Chemical Vapor Deposition (CVD): Used in processes requiring brief high-temperature exposure.
- Thin Film Modification: Adjusts properties of silicon nitride or silicon oxide films.
- Diffusion and Alloying: Facilitates controlled impurity diffusion and alloy formation.
Advantages of RTP
- Minimized Thermal Budget: Reduces overall thermal exposure, preserving sharp junction profiles.
- Improved Uniformity: Ensures consistent processing across the wafer.
- Flexibility: Suitable for diverse processes and materials.